Picosecond large‐signal switching characteristics of a pseudomorphic AlGaAs/InGaAs modulated doped field effect transistor

Picosecond large-signal switching characteristics of a pseudomorphic AlGaAs/InGaAs modulated doped field effect transistor

We present the first comprehensive study of the large-signal switching characteristics of an AlGaAs/InGaAs modulation-doped field-effect transistor on a picosecond time scale. Electra-optic sampling is used to measure drain voltage response to a steplike gate input with a 2.8 ps rise time, at various dc biases. A large-signal switching time of 6.2 ps is obtained. Features deleterious to high-fr...

Switching Performance of Nanotube Core-Shell Heterojunction Electrically Doped Junctionless Tunnel Field Effect Transistor

Abstract: In this paper, a novel tunnel field effect transistor (TFET) is introduced, thatdue to its superior gate controllability, can be considered as a promising candidate forthe conventional TFET. The proposed electrically doped heterojunction TFET(EDHJTFET) has a 3D core-shell nanotube structure with external and internal gatessurrounding the channel that employs el...

A dielectric-modulated field-effect transistor for biosensing.

Interest in biosensors based on field-effect transistors (FETs), where an electrically operated gate controls the flow of charge through a semiconducting channel, is driven by the prospect of integrating biodetection capabilities into existing semiconductor technology. In a number of proposed FET biosensors, surface interactions with biomolecules in solution affect the operation of the gate or ...

Electrochemical Capacitance-Voltage Analysis of Delta-Doped Pseudomorphic High-Electron-Mobility Transistor Material

Improved drain current characteristics of tunnel field effect transistor with heterodielectric stacked structure

In this paper, we proposed a 2-D analytical model for electrical characteristics such as surface potential, electric field and drain current of Silicon-on-Insulator Tunnel Field Effect Transistor (SOI TFETs) with a SiO2/High-k stacked gate-oxide structure. By using superposition principle with suitable boundary conditions, the Poisson’s equation has been solved to model the channel r...